Interconnect structure with air gap compatible with unlanded vias

ABSTRACT

An interconnect structure has a substrate having devices already formed thereon. A dielectric layer covers over the substrate. A conductive structure having at least two substructure separated by an air gap is formed on the dielectric layer. A capping layer covers the conductive structure and the air gap. The capping layer at a portion above the air gap also fills into the air gap by a predetermined distance. The air gap may also extend into the dielectric layer to have a greater height. An etching stop layer is formed on the capping layer. An inter-metal dielectric layer is formed on the etching stop layer. The inter-metal dielectric layer, the etching stop layer and the capping layer are patterned to form an opening that exposes a top surface of the conductive structure. The opening may also expose a top portion of a sidewall of the conductive structure if a misalignment occurs, but the opening does not expose the air gap due to protection from the predetermined distance of the capping layer within the air gap. A next level of conductive structure can be formed to fill the opening. A liner layer can be also formed on a sidewall of the substructure interfacing the air gap, so as to protect the conductive structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation-in-part of an application Ser.No. 09/750,314, filed Dec. 29, 2000, entitled “INTERCONNECT STRUCTUREWITH GAS DIELECTRIC COMPATIBLE WITH UNLANDED VIAS”, abandoned; which isa continuation of an application Ser. No. 08/948,368, filed Oct. 9,1997, entitled “INTERCONNECT STRUCTURE WITH GAS DIELECTRIC COMPATIBLEWITH UNLANDED VIAS”, now U.S. Pat. No. 6,350,672, which claims thepriority of a provisional application Ser. No. 60/053,914, filed Jul.28, 1997. All these applications are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of Invention

The present invention relates to an integrated circuit structure. Moreparticularly, the present invention relates to an interconnect structurewith an air gap.

2. Description of Related Art

Modern integrated circuits include devices such as field effecttransistor (FETs) or bipolar devices formed in and on a semiconductorsubstrate in combination with a multilevel interconnect structure formedabove and in contact with the devices. The multilevel interconnectstructure provides connections to and between different ones of thedevices formed in the substrate and so is an increasingly importantaspect of aggressive designs for integrated circuits. In many integratedcircuits, the multilevel interconnect structure includes one or morearrays of wiring lines extending in parallel to provide connections toand between the devices in closely packed arrays of devices. Such arraysof devices are typical of integrated circuit memories and otheraggressive circuit designs. Closely spaced, parallel wiring lines canprovide undesirable levels of capacitive and inductive coupling betweenadjacent wiring lines, particularly for higher data transmission ratesthrough the arrays of parallel wiring lines. Such capacitive andinductive coupling slow data transmission rates and increase energyconsumption in a manner that can limit the performance of the integratedcircuits. For some aggressive circuit designs, the delays and energyconsumption associated with the circuit's interconnect structure are asignificant limitation on the circuit's performance.

The complexity of modem interconnect structures has become a major costcomponent for integrated circuit designs. Various factors threaten tofurther increase the proportional expense of the interconnect structurewithin integrated circuits. For example, proposals have been advancedfor substituting different interlayer and inter-metal dielectricmaterials into multilevel interconnect structures to improve thecoupling problem. The capacitive and inductive coupling between adjacentwiring lines is mediated by the dielectric material that separates thewiring lines. Present dielectric materials, such as silicon oxidesdeposited by chemical vapor deposition (CVD) from TEOS source gases,have comparatively high dielectric constant, and proposals have beenmade to replace these dielectric materials with dielectric materialshaving lower dielectric constant. Performance could be improved byreplacing the higher dielectric constant materials with lower dielectricconstant materials, with the theoretical minimum dielectric constantbeing provided by a gas or vacuum dielectric. Adoption of thesealternate dielectric materials has not been completely satisfactory tothis point in time, due to the increased cost and processing difficultyassociated with these alternative materials.

One promising implementation of a multilevel interconnect structureusing an air dielectric, that is, air gap is proposed. FIG. 1 is across-sectional view, schematically illustrating a typical interconnectstructure with an air gap design. In FIG. 1, the substrate 10 hasvarious devices (not shown). A dielectric layer 12 is formed over thesubstrate 10. First level wiring lines 20, 22 extend along the surfaceof the dielectric layer 12 and are separated by air gaps 32. The use ofair gaps, as compared to more conventional dielectric materials, ensuresthat there is a minimal level of coupling between the adjacent firstlevel wiring lines 20, 22. The first level air gaps are bounded on thebottom by the dielectric layer 12 and on the top by a thin layer ofsilicon oxide 30. Contacts to the first level wiring lines 20 includevertical interconnects 36 that extend from the first level wiring lines22 to the second level wiring lines 46. The first level wiring lines 22and the second level wiring lines 46 are connected by the verticalinterconnects 36 in between, where the inter-metal dielectric layer 42separates the first level wiring lines 22 and the second level wiringlines 46. These via level air gaps reduce the extent of capacitive andinductive coupling between the first level wiring level wiring lines 20,22 and the second level wiring lines 46, as compared to moreconventional solid dielectric materials. In a similar fashion, secondlevel air gaps 52, bounded on top and bottom by thin layers of siliconoxide 49, 40, are provided between the second level wiring lines 46 toreduce the level of capacitive and inductive coupling between the secondwiring lines. Air gaps 32, 52 surround the wiring lines 20, 22, 46.

In order to fabricate the structure as shown in FIG. 1, a sequence ofprocesses in cross-sectional view is shown in FIGS. 2-5. In FIG. 2, acarbon layer 14 is formed on the dielectric layer 12. The carbon layer14 is patterned by photolithography and etching process, so as to formopenings 16 that expose the dielectric layer. The location of theopenings 16 is the location where an wiring lines, such as the wiringlines 20, 22 of FIG. 1, is to be formed.

In FIG. 3, the openings 16 are filled with metal material by a typicaldamascene manner, so as to form the wiring lines 20, 22. The damascenemanner typically includes depositing a blanket metal layer over thecarbon layer 14, and polishing away the top portion of the metal layer.The residual metal layer fills the openings 16 to form the wiring lines20, 22.

In FIG. 4, a thin silicon oxide layer 30 is formed to cover the carbonlayer 14 and the wiring lines 20, 22. The substrate 10 with the carbonlayer covered by the silicon oxide layer 30 is placed in a furnacesholding an oxygen ambient and heated to a temperature of 400° C.-500° C.for approximately two hours. In this environment, oxygen readilydiffuses through the thin oxide layer 30 to react with the carbon layer14, forming CO₂ which diffuses back through the thin oxide layer andescapes. After two hours ashing period, the entire carbon layer 14 isconsumed, leaving behind air gaps 32 between the oxide layer 30 and thedielectric layer 12 and separating the first level wiring lines 20, 22,as shown in FIG. 4. This process can then be repeated to produce themultilevel interconnect structure shown in FIG. 5, which is also thestructure shown in FIG. 1. The via interconnects 36 in the inter-metaldielectric layer 42 is formed to connect to a next level interconnect 46that are to be formed. The second level interconnect 46 is continuouslyformed by repeating similar process of depositing and patterning thecarbon layer, and filling the interconnect 46. The silicon oxide layer49 is formed covering the carbon layer 52 and the second levelinterconnect 46, such as the wiring lines. The carbon is evaporated awayto leave the air gap 44.

In the conventional interconnect structure as shown in FIG. 1, the airgap is included. This can effectively reduce the capacitance of theinterconnect dielectric layer. However, if a misalignment occurs duringforming openings for the wiring lines, an unlanded via or wiring linewould be formed. This is often when the device integration greatlyincreases. In this situation, the unlanded opening may also penetratethrough the thin silicon oxide layers 30, 40, 49, and improperly exposethe air gaps. When the material for via or wiring line to deposited intothe unlanded opening, the material also enters the air gap, causing afailure of the device.

SUMMARY OF THE INVENTION

As embodied and broadly described herein, the invention provides aninterconnect structure with air gap. A conductive structure, such as anunlanded via or a wiring line, can be formed without improperlypenetrating into an undesired region of the interconnect structure.

The interconnect structure includes a substrate which has devicesalready formed thereon. A dielectric layer covers over the substrate. Aconductive structure enclosed by an air gap is formed on the dielectriclayer. A capping layer covers the conductive structure and the air gap.The capping layer at a portion above the air gap also fills into the airgap by a predetermined distance. The air gap may also extend into thedielectric layer to have a greater height. An etching stop layer isformed on the capping layer. An inter-metal dielectric layer is formedon the etching stop layer. The inter-metal dielectric layer, the etchingstop layer and the capping layer are patterned to form an opening thatexposes a top surface of the conductive structure. The opening may alsoexpose a top portion of a sidewall of the conductive structure if amisalignment occurs, but the opening does not expose the air gap due toprotection from the predetermined distance of the capping layer withinthe air gap. A next level of conductive structure can be formed to fillthe opening.

In the foregoing, if a multilevel interconnect structure is desired,multiple levels of air gap associating with multiple capping layers andetching stop layers can be repeatedly formed under the inter-metaldielectric layer.

A liner layer can be also formed on a sidewall of the substructureinterfacing the air gap, so as to protect the conductive structure.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary, and are intended toprovide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention. In the drawings,

FIGS. 1-5 are cross-sectional views, schematically illustratingconventional process to form a conventional interconnect structure;

FIGS. 6A-6D are cross-sectional views, schematically illustrating aprocess to form an interconnect structure, according to the firstpreferred embodiment of the invention;

FIGS. 7A-7E are cross-sectional views, schematically illustrating aprocess to form an interconnect structure, according to the thirdpreferred embodiment of the invention;

FIGS. 8A-8C are cross-sectional views, schematically illustrating aprocess to form an interconnect structure, according to the fourthpreferred embodiment of the invention;

FIGS. 9A-9B are cross-sectional views, schematically illustrating aprocess to form an interconnect structure, according to the fifthpreferred embodiment of the invention;

FIG. 10 is a cross-sectional view, schematically illustrating anotherinterconnect structure, according to the fifth preferred embodiment ofthe invention;

FIG. 11 is a cross-sectional view, schematically illustrating aninterconnect structure, according to the sixth preferred embodiment ofthe invention; and

FIGS. 12A-12F are a cross-sectional views, schematically illustrating aprocess to form an interconnect structure, according to the seventhpreferred embodiment of the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

As known by prior artisans, an air gap can effectively reduce parasiticcapacitance of an interconnect structure due to the inter dielectriclayer, such as the intermetal dielectric layer. However, an effectiveair gap associating with the inter dielectric layer to form aninterconnect structure is still not well specifically known in the priorskills. The invention introduces various interconnect structuresincorporated with air gap, so as to effectively reduce the parasiticcapacitance of the interconnect structure.

The air gap is also a dielectric with dielectric constant k=1. In thefollowing description and the claims, the term of air gap means an airdielectric, a gas gap, a gas dielectric, or any gas-phase dielectric.

First Embodiment

FIGS. 6A-6D are cross-sectional views, schematically illustrating aprocess to form an interconnect structure, according to the firstpreferred embodiment of the invention. In FIG. 6A, a substrate 50 mayhave a device (not shown) formed thereon. A dielectric layer 52 isformed over the substrate 50, by for example, chemical vapor deposition(CVD). The dielectric layer 52 may also be planarized by, for example,CMP process. A conductive structure 54, such as wiring lines 54, isformed on the dielectric layer 52. The conductive structure 54 can beformed by, for example, a deposition associating with patterning or by adamascene manner. This embodiment, for example, is formed by forming ablanket conductive layer and patterning the blanket conductive layer.The conductive layer preferably includes copper, tungsten, aluminum,aluminum alloy, polysilicon, metal, and metal alloy. Usually, a linerlayer 56 can also be formed over the substrate for protection. The linerlayer 56 at least covers a portion of the conductive structure.

In FIG. 6B, a preliminary sacrificial layer is formed over the substrateto fill the gap between the wiring lines 54, and a top portion of thepreliminary sacrificial layer is removed. As a result, the sacrificiallayer 58 fills the gap between the wiring lines 54 at the bottomportion. The space occupied by the sacrificial layer 58 is the space tobe formed into the air gap as is to be described later. A top surface ofthe sacrificial layer 58 is lower than a top surface of the wiring lines54 by a predetermined distance, serving an etching protection in thesubsequent process. In order to form the air gap, the sacrificial layer58 is necessary to be removed but a cap layer is needed to cover theremoved space. This can be done, for example, by the process shown inFIG. 6C.

In FIG. 6C, a capping layer 60 is formed over the substrate 50, to covera top topographic surface of the substrate 50, where the capping layer60 fills up the gap between the wiring lines 54. In general, thesacrificial layer 58 includes a material which can be reacted awaywithout removing other structures. The sacrificial layer 58 of FIG. 6Bpreferably includes, for example, carbon, photoresist, organic polymer,or carbon-rich material, which can be reacted away under a thermalenvironment. The capping layer includes, for example, dielectric, oxide,porous dielectric, hydrogen silsesquioxane (HSQ). Preferably, thesacrificial layer 58 is a carbon layer since carbon can be easilyreacted away in the thermal oxygen ambient. Carbon usually has noresidual product from reaction, but other materials may leave someresidual products.

Then, the substrate 50, for example, is placed in a furnace holding anoxygen ambient and heated to a temperature of 400° C.-450° C. for abouttwo hours. In this environment, oxygen readily diffuse through thecapping layer 60 to react with the sacrificial layer 58, formingmolecules, such as CO₂. The molecules diffuses or back through thecapping layer 60 and escapes. The space originally occupied by thesacrificial layer 58 now is the air gap 100. In order to have a betterefficiency of forming the air gap, the thickness and the density of thecapping layer 60 is optimized, so that the capping layer 60 can protectetching effect from the subsequent etching process as to be seen laterand also allow the molecules to easily escape. A less material densityof the capping layer allows the reacted product to be easier escape.However, the optimal fabrication conditions are the design choice. Afterthe air gap 100 is formed, an etching stop layer 62 is formed on thecapping layer. Planarization process may also be applied to the cappinglayer 60 or the etching stop layer 62.

In FIG. 6D, a dielectric layer 64 is formed on the etching stop layer62. An opening 66, such as a via opening, is formed in the dielectriclayer 64, the etching stop layer 62, and the capping layer 60 bypatterning those layers. If there is a liner layer 56, the liner layeris also etched. As a result, the opening 66 exposes a top surface of theconductive structure 54. If a misalignment occurs to the opening 66, socalled unlanded opening, the opening also expose a top portion ofsidewall of the conductive structure 54, but without etching through thecapping layer due to protection from the reserved distance as describedin FIG. 6B. Therefore, the capping layer also protect the etching effectfrom etching through the air gap 100.

The role of the etching stop layer is to ease the etching of thedielectric layer 64 for forming the opening 66. Usually, if thedielectric layer 64 includes oxide, doped dielectric, fluorine dopedoxide, or low dielectric-constant material, the etching stop layer 62then includes nitride, silicon oxynitride (SiON), Al₂O₃ AlN, SiC, orAlSi, so as to have a significant etching selectivity between dielectricand stop layer. The dielectric layer 64 usually is thick, since itusually also associates with other devices formed at other portions ofthe substrate 50 (not shown). The dielectric layer may be etched by twostages. The first etching stage takes a rather high etching speed, so asto fast etch the most thickness of the dielectric layer 64. The secondetching stage takes a rather large etching selectivity between theetching stop layer 62 and the dielectric layer 64, so that a top portionof the opening 66 is formed to expose the etching stop layer 62, untilthe global etching on the dielectric layer 64 at the other portions arealso done. Here, the etching stop layer 62 may also be etched but notthrough. Then, the etching process, by for example changing etchant,continuously etches through the etching stop layer 62 and a portion ofthe capping layer 60 until the conductive structure 54 is exposed.

The subsequent processes to complete the interconnect by filling theopening 66 with a conductive plug (not shown) are known by one skilledin the art, and are not further described. In the embodiment only twolevels are described. If the interconnect structure is a multilevelstructure, the air gap can be repeatedly formed associating anothercapping layer or the etching stop layer with a similar features of theair gap 100 and the capping layer 60.

Second Embodiment

FIGS. 7A-7E are cross-sectional views, schematically illustrating aprocess to form an interconnect structure, according to the thirdpreferred embodiment of the invention. The interconnect structure mayalso be formed by a damascene manner, particularly when the conductivestructure includes copper, aluminum (Al), or tungsten, or even metalalloy. The damascene interconnect structure can be, for example, formedby the process shown in FIGS. 7A-7E. In FIG. 7A, the sacrificial layer58 is formed on the dielectric layer 52. The sacrificial layer 58 isthen patterned to form an opening where is the place the conductivestructure is to be formed by damascene.

In FIG. 7B, if a conformal liner layer 72′ is desired, it can be formedover the substrate 50. A preliminary conductive layer, such as a copperlayer or tungsten layer is blanket deposited over the substrate 50. InFIG. 7C, a planarization process, such as a chemical mechanical polish(CMP) process, is performed to remove the top portion of the conductivelayer 74′, and maybe the liner layer 72′ if the liner layer 72′ isincluded. The conductive structure 74 and the liner layer 72 is formed.The liner layer 72 further protects the conductive structure 74 on thedielectric layer 52.

In FIG. 7D, the sacrificial layer 58 is recessed to have a distancelower than a top surface of the conductive structure 74, serving forprotection. In FIG. 7E, similar to the previous embodiments, the cappinglayer 60, the air gap 100, the etching stop layer 62, the dielectriclayer 64, and the opening 66 are according formed.

A conductive plug (not shown) is then formed to fill the opening 66. Ifthe interconnect structure is a multilevel structure, the air gap can berepeatedly formed associating another capping layer or the etching stoplayer with a similar features of the air gap 100 and the capping layer60.

Third Embodiment

As discussed in the beginning, the air gap can effectively reduce theparasitic capacitance. If the dimension of air gap is larger, it hasmore effect. One way to increase the dimension of the air gap isincreasing the height. In the following embodiment, an air gap withgreater height is introduced.

FIGS. 8A-8C are cross-sectional views, schematically illustrating aprocess to form an interconnect structure, according to the forthpreferred embodiment of the invention. In FIG. 8A, the conductivestructure 54 is formed on the dielectric layer 52. The gap between thewiring lines of the conductive structure 54 has a further space enteringthe dielectric layer 52. It can be, for example, achieved by etching thedielectric layer 52 to form a shallow opening or a shallow recess regionserving as the bottom portion of the desired air gap, which is to beformed later. Then, the sacrificial layer 58 is formed to partially fillthe gap between the wiring lines 54 with a distance from the top surfaceof the wiring lines 54.

In FIG. 8B, similarly to the first embodiment, the capping layer 60 isformed over the substrate 50 to cover the conductive structure 54 andthe sacrificial layer 58 of FIG. 8A. The sacrificial layer 58 isconsumed away by reaction, so that the air gap 100 is formed. The airgap 100 includes at least one with greater height.

In FIG. 8C, the opening 66 formed in the dielectric layer 64, theetching stop layer 62, and the capping layer 60, so as to expose theconductive structure 54. The opening 66 is shown in an unlanded opening.

A conductive plug (not shown) is then formed to fill the opening 66. Ifthe interconnect structure is a multilevel structure, the air gap can berepeatedly formed associating another capping layer or the etching stoplayer with a similar features of the air gap 100 and the capping layer60. If a liner layer is desired, it can be formed on the peripheralsurface of the conductive structure similarly to the previous linerlayer.

Fourth Embodiment

The interconnect structure can be further modified to have greaterheight of the air gap. FIGS. 9A-9B are cross-sectional views,schematically illustrating a process to form an interconnect structure,according to the fifth preferred embodiment of the invention. In FIG.9A, an additional cap layer 80 is formed on the conductive structure 54.A side dielectric layer 78, such as a spacer, is formed on sidewalls ofthe conductive structure 54 and the cap layer 80. The capping layer 60,the etching stop layer 62 and the dielectric layer 64 are similarlyformed over the substrate 50, like the previous embodiment, where theair gap 100 is formed also through a sacrificial layer that is consumedaway later. The air gap 100 is enclosed by the side dielectric layer 78from side in this embodiment. This side dielectric layer 78 can preventthe cap layer 80 from being etched through, resulting in exposing theair gap 100. The cap layer 80 is chosen to include a material, which hasan higher etching ratio to the capping layer 60 and also the sidedielectric layer 78. Preferably, the cap layer 80 is made of dopeddielectric, such as phosphosilicate glass (PSG) or borophosphosilicateglass (BPSG), usually has a faster etching ratio to the capping layer60. The cap layer 80 at least produces two advantages. One is that thethickness of the cap layer 80 increases the height of the air gap. Oneis that a self-aligned unlanded opening can be formed.

In FIG. 9B, the opening 66 is formed in the dielectric layer 64, thecapping layer 60, the etching stop layer 62, and the dielectric cap 80.Since the dielectric cap 80 is etched faster than the capping layer 60and the spacer 78 is etched without significant amount, the dielectriccap 80 is etched in a self-aligned manner. The spacer 78, the cappinglayer 60 and the dielectric layer 52 enclose the air gap 100 withoutdestruction of the air gap 100.

As described before, the height of the air gap 100 can be furtherextended into the dielectric layer 52 as shown in FIG. 10. In thesituation, a shallow opening can be formed in the dielectric layer 52 atthe desired places. It can also be formed by using the conductivestructure 54 as an etching mask to etch the dielectric layer 52.

A conductive plug (not shown) is then formed to fill the opening 66. Ifthe interconnect structure is a multilevel structure, the air gap can berepeatedly formed associating another capping layer or the etching stoplayer with a similar features of the air gap 100 and the capping layer60. If a liner layer is desired, it can be formed on the peripheralsurface of the conductive structure similarly to the previous linerlayer.

Fifth Embodiment

The air gap can effectively reduce the parasitic capacitance of theinterconnect structure. However, the air gap does not provide asupporting effect for the structure. If the air gap between theconductive structure extends too wide, the capping layer and other upperlayers may have no sufficient mechanical strength to hold the structure.A sag or breakage could occur above the wide air gap. In order to avoidthis kind of problem, a dummy structure can be simultaneously formed atthe location with loose structure density.

FIG. 11 is a cross-sectional view, schematically illustrating aninterconnect structure, according to the sixth preferred embodiment ofthe invention. In FIG. 11, the dummy structure 82 can be simultaneouslyformed together with the conductive structure 54 at the weak mechanicalpoint. The dummy structure 82 is made of, for example, conductive ordielectric materials, which depends on requirements of design. The otherelements, similar to the previous embodiment, can be formed without aspecial process. The detail example of fabrication processes are notdescribed again here.

If the interconnect structure is a multilevel structure, the air gap canbe repeatedly formed associating another capping layer or the etchingstop layer with a similar features of the air gap 100 and the cappinglayer 60.

Sixth Embodiment

In the foregoing embodiment, the protection distance, that is, theexposed portion of the sidewall of the conductive structure is formed.However, a precise quantity of the protection distance may be not easilycontrolled by recessing the sacrificial layer. A precise quantity can becontrolled by employing an intermediate dielectric layer that has athickness equal to the protection distance.

FIGS. 12A-12F are a cross-sectional views, schematically illustrating aprocess to form an interconnect structure, according to the seventhpreferred embodiment of the invention. In FIG. 12A, the sacrificiallayer 58 is formed on the dielectric layer 52. Before patterning thesacrificial layer 58, a dielectric layer 84 is formed on the sacrificiallayer 58. The thickness of the dielectric layer 84 is determined by adesired protection distance. Since the thickness of the dielectric layer84 can be precisely controlled without problem. This allows theprotection distance to be precisely and easily controlled.

In FIG. 12B, the dielectric layer 84 and the sacrificial layer 58 arepatterned to form an opening at a desired location where a conductivestructure is to be deposited thereon. In FIG. 12C, a conductivestructure 86 is formed to fill the opening by, for example, thedamascene manner. The damascene manner includes, for example, forming ablanket conductive layer over the substrate, at least filling theopening, and polishing or etching back the blanket conductive layer toexpose the dielectric layer, which usually is hard serving as a stop.The polishing process include, for example, a CMP process. As a result,the conductive structure 86 is formed on the dielectric layer 52 andsurrounded by the sacrificial layer 58 and the dielectric layer 84.

In FIG. 12D, the dielectric layer 84 is removed, leaving a recess regionof the sacrificial layer 58. Since the thickness of the dielectric layer84 is precisely controlled, the protection distance is preciselycontrolled also.

In FIG. 12E, a capping layer 88, conformal to a topographic surface, isformed over the substrate 50. Then, the sacrificial layer 58 is consumedaway through the capping layer 88, leaving an air space. The air spaceis referred as the air gap 100 surrounding the conductive structure 86.

In FIG. 12F, an etching stop layer 90, conformal to the capping layer88, is formed on the capping layer 88. A dielectric layer 92 is formedon the etching stop layer 90. An opening is formed by patterning thedielectric layer 92, the etching stop layer 90, and the capping layer88, so as to expose the conductive structure 86. If the opening is anunlanded opening due to misalignment, the opening also exposes a topportion of sidewall of the conductive structure 86 but does not exposethe air gap 100 due to protection by the protection distance. Theopening can stop in the etching stop layer 90, or even reach to thecapping layer 88. Since the capping layer 88 is thin and has covered aportion of sidewall of the conductive structure 86, the opening may onlystop in the etching stop layer 90 when the opening exposes theconductive structure 86. However, the opening may also etch through theetching stop layer but not etch through the capping layer. The etchingstop layer 90 mainly is used to stop the etching process for the seconddielectric layer 92 in the foregoing descriptions.

If the interconnect structure is a multilevel structure, the air gap canbe repeatedly formed associating another capping layer or the etchingstop layer with a similar features of the air gap and the capping layer.

The invention has introduced various embodiments. In general, theembodiments can be selectively combined into a desired structure withoutloosing the features.

In conclusion, the interconnect structure of the invention at least hasalternatively several features as follows:

1. An etching stop layer and a capping layer covers the conductivestructure and the air gap. The etching stop layer allows the unlandedvia opening to be formed with uniformity since the etching stop layercan decrease etching speed. The etching stop layer can prevent a severover-etching from occurring at some place needing only a smaller etchingdepth. The etching process can stop on the etching stop layer to have auniform etching depth, and then the etching process continues to etchthe desired places having about the same etching depth. In general, theetching stop layer is used to adjust etching speed to avoid over etchingand therefore to achieve the etching uniformity. The capping layerprotects the air gap from being penetrated.

2. A liner layer covers a portion of the conductive structure forprotection.

3. The height of the air gap is increased by extending the air gap intothe underlying dielectric layer.

4. The height of the air gap is also increased by including a dielectriccap on the conductive structure, where the dielectric cap preferably isa doped dielectric with a faster etching rate to the dielectric layer64, so that the unlanded opening has a self-aligned etching property.

5. The dummy structure at the place with a loose device density canprovide additional holding effect.

6. The protection distance to the air gap can be precisely controlled byemploying a dielectric layer. The thickness is equal to the protectiondistance.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

What is claimed is:
 1. A semiconductor interconnect structure,comprising: a first level conductive structure on a substrate; a firstcap layer over the first level conductive structure; and an etching stoplayer over the first cap layer, wherein at least a portion of sidewallsof the first level conductive structure are surrounded by first levelair gaps, and wherein a top surface of the air gap is lower than a topsurface of said conductive structure, an opening disposed over part of asurface of the first level conductive structure, over part of the firstcap layer, and over part of the etching stop layer.
 2. The interconnectstructure of claim 1, wherein the first level conductive structurecomprises one material selected from a group consisting of copper,tungsten, aluminum, polysilicon, metal, and metal alloy.
 3. Theinterconnect structure of claim 1, wherein the first cap layer comprisesone material selected from a group consisting of dielectric, oxide,porous dielectric, and hydrogen silsesquioxane.
 4. The interconnectstructure of claim 1, wherein the etching stop layer comprises amaterial having a higher etching selectivity than the first cap layer.5. The interconnect structure of claim 1, wherein a width of the openingis substantially equal to a width of the first level conductivestructure.
 6. The interconnect structure of claim 1, further comprisinga first dielectric layer over the first etching stop layer, wherein theopening exposes part of the first dielectric layer.
 7. The interconnectstructure of claim 6, wherein the first dielectric layer includes onematerial selected from a group consisting of oxide, fluorine dopedoxide, doped dielectric, and low dielectric-constant material.
 8. Theinterconnect structure of claim 6, further comprising a second levelconductive structure substantially filling the opening to electricallycontact the first level conductive structure.
 9. The interconnectstructure of claim 8, wherein the second level conductive structurecomprises one material selected from a group consisting of copper,tungsten, aluminum, polysilicon, metal, and metal alloy.
 10. Theinterconnect structure of claim 1, wherein a level of a top surface ofthe first level conductive structure is higher than a level of aninterface between the first level air gap and the first cap layercorresponding to a level between the first level conductive structureand the substrate.
 11. The interconnect structure of claim 1, furthercomprising a liner layer between the first level conductive structureand the cap layer, wherein the liner layer is substantially conformal tothe first level conductive structure and the substrate.
 12. Theinterconnect structure of claim 1, further comprising a spacer coveringsidewalls of the first level conductive structure for protecting thefirst level conductive structure.
 13. The interconnect structure ofclaim 1, wherein a level of an interface between the first level air gapand the substrate is lower than a level of an interface between thefirst level conductive structure and the substrate.
 14. The interconnectstructure of claim 1, wherein the first level air gap extends into thesubstrate for a predetermined distance from a level of an interfacebetween the substrate and the first level conductive structure.
 15. Theinterconnect structure of claim 1, further comprising a seconddielectric layer between the substrate and the first level conductivestructure.
 16. The interconnect structure of claim 1, wherein the firstlevel conductive structure further comprises a dummy portion interposedbetween the first cap layer and the substrate in the air gap forproviding mechanical supporting strength of the interconnect structure.17. The interconnect structure of claim 16, wherein the dummy portion ismade of dielectric materials.
 18. The interconnect structure of claim16, wherein the dummy portion is made of conductive materials.
 19. Asemiconductor interconnect structure, comprising: a first levelconductive structure having a top surface and a side surface, the sidesurface having a lower portion surrounded by first level air gaps and anupper portion surrounded by a first cap layer; an etching stop layerover the first cap layer; and an opening disposed over the top surfaceand part of the upper portion of the side surface of the first levelconductive structure, wherein the first level air gaps are isolated fromthe opening by the first cap layer.
 20. The interconnect structure ofclaim 19, wherein the first level conductive structure comprises onematerial selected from a group consisting of copper, tungsten, aluminum,polysilicon, metal, and metal alloy.
 21. The interconnect structure ofclaim 19, wherein the first cap layer comprises one material selectedfrom a group consisting of dielectric, oxide, porous dielectric, andhydrogen silsesquioxane.
 22. The interconnect structure of claim 19,wherein the etching stop layer comprises a material having a higheretching selectivity than the first cap layer.
 23. The interconnectstructure of claim 19, wherein a width of the opening is substantiallyequal to a width of the first level conductive structure.
 24. Theinterconnect structure of claim 19, further comprising a firstdielectric layer over the first etching stop layer, wherein the openingexposes part of the first dielectric layer.
 25. The interconnectstructure of claim 24, wherein the first dielectric layer includes onematerial selected from a group consisting of oxide, fluorine dopedoxide, doped dielectric, and low dielectric-constant material.
 26. Theinterconnect structure of claim 24, further comprising a second levelconductive structure substantially filling the opening to electricallycontact the first level conductive structure.
 27. The interconnectstructure of claim 26, wherein the first level conductive structurecomprises one material selected from a group consisting of copper,tungsten, aluminum, polysilicon, metal, and metal alloy.
 28. Theinterconnect structure of claim 19, wherein a level of the top surfaceof the first level conductive structure is higher than a level of theinterface between the first level air gap and the first cap layercorresponding to a level between the first level conductive structureand the substrate.
 29. The interconnect structure of claim 19, furthercomprising a liner layer between the first level conductive structureand the cap layer, wherein the liner layer is substantially conformal tothe first level conductive structure and the substrate.
 30. Theinterconnect structure of claim 19, further comprising a spacer coveringsidewalls of the first level conductive structure for protecting thefirst level conductive structure.
 31. The interconnect structure ofclaim 19, wherein a level of an interface between the first level airgap and the substrate is lower than a level of an interface between thefirst level conductive structure and the substrate.
 32. The interconnectstructure of claim 19, wherein the first level air gap extends into thesubstrate for a predetermined distance from a level of an interfacebetween the substrate and the first level conductive structure.
 33. Theinterconnect structure of claim 19, further comprising a seconddielectric layer between the substrate and the first level conductivestructure.
 34. The interconnect structure of claim 19, wherein the firstlevel conductive structure further comprises a dummy portion interposedbetween the first cap layer and the substrate in the air gap forproviding mechanical supporting strength of the interconnect structure.35. The interconnect structure of claim 34, wherein the dummy portion ismade of dielectric materials.
 36. The interconnect structure of claim34, wherein the dummy portion is made of conductive materials.
 37. Asemiconductor interconnect structure, comprising: a conductive structureon a substrate, wherein a portion of the conductive structure issurrounded by a air gap, wherein a top surface of the air gap is lowerthan a top surface of said conductive structure; a cap layer over theconductive structure; an etching stop layer over the cap layer; and anopening having a lower portion that exposes a top surface of theconductive structure at a first point, the lower portion also exposespart of the cap layer at a second point, and exposes part of the etchingstop layer at a third point.
 38. The interconnect structure of claim 37,wherein the conductive structure comprises one material selected from agroup consisting of copper, tungsten, aluminum, polysilicon, metal, andmetal alloy.
 39. The interconnect structure of claim 37, wherein the caplayer comprises one material selected from a group consisting ofdielectric, oxide, porous dielectric, and hydrogen silsesquioxane. 40.The interconnect structure of claim 37, wherein the etching stop layercomprises a material having a higher etching selectivity than the caplayer.
 41. The interconnect structure of claim 37, wherein a width ofthe opening is substantially equal to a width of the conductivestructure.
 42. The interconnect structure of claim 37, furthercomprising a first dielectric layer over the etching stop layer, whereinthe opening exposes part of the first dielectric layer.
 43. Theinterconnect structure of claim 42, wherein the first dielectric layerincludes one material selected from a group consisting of oxide,fluorine doped oxide, doped dielectric, and low dielectric-constantmaterial.
 44. The interconnect structure of claim 42, further comprisinga second level conductive structure substantially filling the opening toelectrically contact the first level conductive structure.
 45. Theinterconnect structure of claim 44, wherein the conductive structurecomprises one material selected from a group consisting of copper,tungsten, aluminum, polysilicon, metal, and metal alloy.
 46. Theinterconnect structure of claim 37, wherein a level of a top surface ofthe conductive structure is higher than a level of an interface betweenthe air gap and the cap layer corresponding to a level between theconductive structure and the substrate.
 47. The interconnect structureof claim 37, further comprising a liner layer between the conductivestructure and the cap layer, wherein the liner layer is substantiallyconformal to the conductive structure and the substrate.
 48. Theinterconnect structure of claim 37, further comprising a spacer coveringsidewalls of the conductive structure for protecting the conductivestructure.
 49. The interconnect structure of claim 37, wherein a levelof an interface between the air gap and the substrate is lower than alevel of an interface between the conductive structure and thesubstrate.
 50. The interconnect structure of claim 37, wherein the airgap extends into the substrate for a predetermined distance from a levelof an interface between the substrate and the conductive structure. 51.The interconnect structure of claim 37, further comprising a seconddielectric layer between the substrate and the conductive structure. 52.The interconnect structure of claim 37, wherein the conductive structurefurther comprises a dummy portion interposed between the cap layer andthe substrate in the air gap for providing mechanical supportingstrength of the interconnect structure.
 53. The interconnect structureof claim 52, wherein the dummy portion is made of dielectric materials.54. The interconnect structure of claim 52, wherein the dummy portion ismade of conductive materials.
 55. A semiconductor interconnectstructure, comprising: a pair of first level conductive structures on asubstrate; a first cap layer over the first level conductive structure,wherein a first level air gap is interposed between the first levelconductive structures, wherein a top surface of the first level air gapis lower than a top surface of said conductive structures; an etchingstop layer over the first cap layer, wherein the etching stop layer, thefirst cap layer and one of the first level conductive structures have afirst opening to expose a portion of a surface of the first levelconductive structure and the first level air gap is isolated from thefirst opening.
 56. A semiconductor interconnect structure, comprising: afirst level conductive structure on a substrate, wherein sidewalls ofthe first level conductive structure are surrounded by a first level airgap, wherein a top surface of the first level air gap is lower than atop surface of said first level conductive structure; a first cap layerover the first level conductive structure; an etching stop layer overthe first cap layer; and an opening exposing part of a surface of thefirst level conductive structure, the opening also exposing part of thefirst cap layer and part of the etching stop layer, wherein the firstlevel air gap is isolated from the opening by the first cap layer.
 57. Asemiconductor interconnect structure, comprising: a first levelconductive structure on a substrate; a first cap layer on the firstlevel conductive structure; a side dielectric layer on sidewalls of thefirst level conductive structure and at least part of sidewalls of thefirst cap layer; a second cap layer over the first cap layer; an etchingstop layer over the second cap layer; and an opening disposed over partof a surface of the first level conductive structure, over part of thefirst cap layer, over part of the side dielectric layer, and over partof the second cap layer, wherein the first level conductive structure issurrounded by first level air gaps, wherein the first level air gaps areisolated from the opening by the side dielectric layer and the secondcap layer.
 58. The interconnect structure of claim 57, wherein the firstlevel conductive structure comprises one material selected from a groupconsisting of copper, tungsten, aluminum, polysilicon, metal, and metalalloy.
 59. The interconnect structure of claim 57, wherein the first caplayer comprises a material having a higher etching ratio to the secondcap layer and the side dielectric layer.
 60. The interconnect structureof claim 57, wherein the second cap layer comprises one materialselected from a group consisting of dielectric, oxide, porousdielectric, and hydrogen silsesquioxane.
 61. The interconnect structureof claim 57, wherein a width of the opening is substantially equal to awidth of the first level conductive structure.
 62. The interconnectstructure of claim 57, further comprising a first dielectric layer overthe first etching stop layer, wherein the opening exposes part of thefirst dielectric layer.
 63. The interconnect structure of claim 62,wherein the first dielectric layer includes one material selected from agroup consisting of oxide, fluorine doped oxide, doped dielectric, andlow dielectric-constant material.
 64. The interconnect structure ofclaim 62, further comprising a second level conductive structuresubstantially filling the opening to electrically contact the firstlevel conductive structure.
 65. The interconnect structure of claim 64,wherein the second level conductive structure comprises one materialselected from a group consisting of copper, tungsten, aluminum,polysilicon, metal, and metal alloy.
 66. The interconnect structure ofclaim 57, wherein a level of a top surface of the first level conductivestructure is lower than a level of an interface between the first levelair gap and the second cap layer corresponding to a level above thefirst level conductive structure.
 67. The interconnect structure ofclaim 57, wherein a level of an interface between the first level airgap and the substrate is lower than a level of an interface between thefirst level conductive structure and the substrate.
 68. The interconnectstructure of claim 57, wherein the first level air gap extends into thesubstrate for a predetermined distance from a level of an interfacebetween the substrate and the first level conductive structure.
 69. Theinterconnect structure of claim 57, further comprising a seconddielectric layer between the substrate and the first level conductivestructure.
 70. The interconnect structure of claim 57, wherein the firstlevel conductive structure further comprises a dummy portion interposedbetween the first cap layer and the substrate in the air gap forproviding mechanical supporting strength of the interconnect structure.71. The interconnect structure of claim 70, wherein the dummy portion ismade of dielectric materials.
 72. The interconnect structure of claim70, wherein the dummy portion is made of conductive materials.
 73. Asemiconductor interconnect structure, comprising: a first levelconductive structure on a substrate, wherein sidewalls of the firstlevel conductive structure are surrounded by first level air gaps; afirst cap layer over the first level conductive structure; a sidedielectric layer disposed between the first level conductive structure,a second cap layer and the first level air gap; a second cap layer overthe first cap layer; an etching stop layer over the second cap layer;and an opening penetrating through the etching stop layer, a portion ofthe second cap layer, a portion of the first cap layer to expose aportion of the first level conductive structure, a portion of the sidedielectric layer, wherein the first level air gaps are isolated from theopening by the side dielectric layer.
 74. A semiconductor interconnectstructure, comprising: a first level conductive structure on asubstrate; a first cap layer over the first level conductive structure;a side dielectric layer on sidewalls of the first level conductivestructure and at least part of the first cap layer; a second cap layerover the first cap layer; an etching stop layer over the second caplayer; and an opening penetrating through the etching stop layer, thesecond cap layer, the first cap layer to expose a portion of the firstlevel conductive structure, a portion of the side dielectric layer,wherein sidewalls of the side dielectric layer are surrounded by firstlevel air gaps and the first level air gaps are isolated from theopening by the side dielectric layer.